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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
CMBT5551
SILICON N-P-N HIGH-VOLTAGE TRANSISTOR
N-P-N transistor
Marking CMBT5551 = G1
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25 C Junction temperature Collector-emitter saturation voltage IC = 50 mA; IB = 5 mA D.C. current gain IC = 10 mA; VCE = 5 V RATINGS (at TA = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector)
VCBO VCEO IC Ptot Tj VCEsat hFE
max. max. max. max max. max. min.
180 160 600 250 150
V V mA mW C
0.2 V 80
VCBO VCEO VEBO
max. max. max.
180 V 160 V 6V
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBT5551
Collector current Total power dissipation up to Tamb = 25 C Junction temperature Storage temperature range THERMAL RESISTANCE from junction to ambient
IC Ptot Tj Tstg
max. 600 max 250 max. 150 -55 to +150
mA mW C C
Rth j-a
500 K/W
CHARACTERISTICS (at TA = 25C unless otherwise specified) Collector cut-off current ICBO IE = 0; VCB = 120 V ICBO IE = 0; VCB = 120 V; Tamb = 100 C Emitter cut-off current IEBO IC = 0; VEB = 4 V Breakdown voltages V(BR)CEO IC = 1 mA; IB = 0 V(BR)CBO IC = 100 A; IE = 0 V(BR)EBO IC = 0; IE = 10 A Saturation voltages VCEsat IC = 10 mA; IB = 1 mA VBEsat VCEsat IC = 50 mA; IB = 5 mA VBEsat D.C. current gain hFE IC = 1 mA; VCE = 5 V IC = 10 mA; VCE = 5 V IC = 50 mA; VCE = 5 V Small-signal current gain IC = 1 mA; VCE = 10 V; f = 1 kHz Output capacitance at f = 1 MHz IE = 0; VCB = 10 V Input capacitance at f = 1 MHz IC = 0; VEB = 0.5 V Transition frequency at f = 100 MHz IC = 10 mA; VCE = 10 V hFE hFE hfe Co Ci fT
max. max. max. min. min. min. max. max. max. max. min. min. max. min. min. max. max. max. min. max.
50 nA 50 A 50 nA 160 V 180 V 6V 0.15 1 0.2 1 80 80 250 30 50 200 6 pF 30 pF 100 MHz 300 MHz V V V V
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemil.com
Continental Device India Limited Data Sheet Page 3 of 3

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